FDB6030L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB6030L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO263AB

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FDB6030L datasheet

 ..1. Size:94K  fairchild semi
fdp6030l fdb6030l.pdf pdf_icon

FDB6030L

August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr

 7.1. Size:90K  fairchild semi
fdp6030bl fdb6030bl.pdf pdf_icon

FDB6030L

July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Critical DC elect

 7.2. Size:203K  onsemi
fdp6030bl fdb6030bl.pdf pdf_icon

FDB6030L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdf pdf_icon

FDB6030L

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic

Otros transistores... FB180SA10, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690, FDB6030BL, IRLB4132, FDB6035AL, FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L, FDB7045L, FDB8030L