FDB6030L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB6030L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: TO263AB
Búsqueda de reemplazo de FDB6030L MOSFET
- Selecciónⓘ de transistores por parámetros
FDB6030L datasheet
fdp6030l fdb6030l.pdf
August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr
fdp6030bl fdb6030bl.pdf
July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Critical DC elect
fdp6030bl fdb6030bl.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp6035l fdb6035l.pdf
April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic
Otros transistores... FB180SA10, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690, FDB6030BL, IRLB4132, FDB6035AL, FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L, FDB7045L, FDB8030L
History: C2T212
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
Popular searches
2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649
