Справочник MOSFET. FDB6030L

 

FDB6030L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDB6030L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO263AB
     - подбор MOSFET транзистора по параметрам

 

FDB6030L Datasheet (PDF)

 ..1. Size:94K  fairchild semi
fdp6030l fdb6030l.pdfpdf_icon

FDB6030L

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr

 7.1. Size:90K  fairchild semi
fdp6030bl fdb6030bl.pdfpdf_icon

FDB6030L

July 2000FDP6030BL/FDB6030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Critical DC elect

 7.2. Size:203K  onsemi
fdp6030bl fdb6030bl.pdfpdf_icon

FDB6030L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdfpdf_icon

FDB6030L

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic

Другие MOSFET... FB180SA10 , AO3423B , AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , AON7410 , FDB6035AL , FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , FDB8030L .

History: NP84N055KLE | WSP4953A | SSM6J512NU | 2N4338 | SI1402DH | WMB080N10LG2 | PSMN0R9-25YLC

 

 
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