FDB6030L Datasheet. Specs and Replacement
Type Designator: FDB6030L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO263AB
📄📄 Copy
FDB6030L substitution
- MOSFET ⓘ Cross-Reference Search
FDB6030L datasheet
fdp6030l fdb6030l.pdf
August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr... See More ⇒
fdp6030bl fdb6030bl.pdf
July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Critical DC elect... See More ⇒
fdp6030bl fdb6030bl.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdp6035l fdb6035l.pdf
April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic... See More ⇒
Detailed specifications: FB180SA10, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690, FDB6030BL, IRLB4132, FDB6035AL, FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L, FDB7045L, FDB8030L
Keywords - FDB6030L MOSFET specs
FDB6030L cross reference
FDB6030L equivalent finder
FDB6030L pdf lookup
FDB6030L substitution
FDB6030L replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
