4N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free4 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

AP04N60I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

AP04N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

AP04N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AGSDescriptionGDAP04N60 series are specially designed as main switching devices for STO-220CFM(I)universal 90~265VAC off-line AC/DC converter applicat

Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

HM4N60K / HM4N60IHM4N60K / HM4N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin