4N60I Todos los transistores

 ..1. Size:794K  wietron
 4n60d 4n60f 4n60i 4n60p.pdf

4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.1. Size:57K  ape
 ap04n60i-hf.pdf

AP04N60I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC conv

 0.2. Size:59K  ape
 ap04n60i-a-hf.pdf

AP04N60I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N60 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC con

 0.3. Size:57K  ape
 ap04n60i.pdf

AP04N60I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4A G S Description G D AP04N60 series are specially designed as main switching devices for S TO-220CFM(I) universal 90 265VAC off-line AC/DC converter applicat

 0.4. Size:339K  cystek
 mtn4n60i3.pdf

Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60I3 ID 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 0.5. Size:753K  cn hmsemi
 hm4n60k hm4n60i.pdf

HM4N60K / HM4N60I HM4N60K / HM4N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin