4N60I
MOSFET. Datasheet pdf. Equivalent
Type Designator: 4N60I
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 77
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 66
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
TO251
4N60I
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4N60I
Datasheet (PDF)
..1. Size:794K wietron
4n60d 4n60f 4n60i 4n60p.pdf 
4N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free4 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high
0.1. Size:57K ape
ap04n60i-hf.pdf
AP04N60I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv
0.2. Size:59K ape
ap04n60i-a-hf.pdf
AP04N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con
0.3. Size:57K ape
ap04n60i.pdf
AP04N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AGSDescriptionGDAP04N60 series are specially designed as main switching devices for STO-220CFM(I)universal 90~265VAC off-line AC/DC converter applicat
0.4. Size:339K cystek
mtn4n60i3.pdf
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp.Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.8(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
0.5. Size:753K cn hmsemi
hm4n60k hm4n60i.pdf
HM4N60K / HM4N60IHM4N60K / HM4N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin
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