Справочник MOSFET. 4N60I

 

4N60I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 4N60I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 77 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 66 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для 4N60I

   - подбор ⓘ MOSFET транзистора по параметрам

 

4N60I Datasheet (PDF)

 ..1. Size:794K  wietron
4n60d 4n60f 4n60i 4n60p.pdfpdf_icon

4N60I

4N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free4 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.1. Size:57K  ape
ap04n60i-hf.pdfpdf_icon

4N60I

AP04N60I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

 0.2. Size:59K  ape
ap04n60i-a-hf.pdfpdf_icon

4N60I

AP04N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 0.3. Size:57K  ape
ap04n60i.pdfpdf_icon

4N60I

AP04N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.35 Simple Drive Requirement ID 4AGSDescriptionGDAP04N60 series are specially designed as main switching devices for STO-220CFM(I)universal 90~265VAC off-line AC/DC converter applicat

Другие MOSFET... 2N60I , 2N60P , 2N7002KT , 2SK3018W , 2SK3019T , 2SK3541M , 4N60D , 4N60F , P60NF06 , 4N60P , 8N60F , 8N60P , MGSF1P02 , WT4410M , WTC1333 , WTC2301 , WTC2302 .

History: 2SK2751 | IPI040N06N3G | STF8N65M5 | IPI45N06S4-09 | STT3962N | 7N10L-TN3 | AP15P03Q

 

 
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