WTC2312 Todos los transistores

WTC2312 N-Channel Enhancement 3 DRAIN DRAIN CURRENT Mode Power MOSFET 4.9 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE Features * Super High Dense Cell Design For Low RDS(ON) 2 SOURCE RDS(ON)

WTC2305DS P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)

WTC2302 N-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET 2.3 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) 1 RDS(ON)

WTC2305 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)

WTC2301 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -2.3 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)

WTC2306 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 5.8 AMPERES DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 1 30 VOLTAGE GATE 2 Features SOURCE * Super High Dense Cell Design For Low RDS(on) RDS(on)