WTC2312 MOSFET Datasheet: N-Ch, 20V, 4.9A. Full specification with pinout and replacement list

WTC2312 Specs and Replacement

Type Designator: WTC2312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOT23

WTC2312 substitution

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WTC2312 datasheet

..1. Size:858K wietron
wtc2312.pdf pdf_icon

WTC2312 N-Channel Enhancement 3 DRAIN DRAIN CURRENT Mode Power MOSFET 4.9 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE Features * Super High Dense Cell Design For Low RDS(ON) 2 SOURCE RDS(ON)... See More ⇒

9.1. Size:2120K wietron
wtc2305ds.pdf pdf_icon

WTC2305DS P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON) ... See More ⇒

9.2. Size:723K wietron
wtc2302.pdf pdf_icon

WTC2302 N-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET 2.3 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) 1 RDS(ON) ... See More ⇒

9.3. Size:2328K wietron
wtc2305.pdf pdf_icon

WTC2305 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON) ... See More ⇒