All MOSFET. WTC2312 Datasheet

 

WTC2312 Datasheet and Replacement


   Type Designator: WTC2312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT23
 

 WTC2312 substitution

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WTC2312 Datasheet (PDF)

 ..1. Size:858K  wietron
 wtc2312.pdf pdf_icon

WTC2312

WTC2312N-Channel Enhancement 3 DRAINDRAIN CURRENTMode Power MOSFET4.9 AMPERES P b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE20 VOLTAGE1 GATEFeatures:* Super High Dense Cell Design For Low RDS(ON)2 SOURCE RDS(ON)

 9.1. Size:2120K  wietron
 wtc2305ds.pdf pdf_icon

WTC2312

WTC2305DSP-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -3.5 AMPERESDRAIN SOURCE VOLTAGE-8 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

 9.2. Size:723K  wietron
 wtc2302.pdf pdf_icon

WTC2312

WTC2302N-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET2.3 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE20 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

 9.3. Size:2328K  wietron
 wtc2305.pdf pdf_icon

WTC2312

WTC2305P-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -4.2 AMPERESDRAIN SOURCE VOLTAGE-30 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)

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Datasheet: MGSF1P02 , WT4410M , WTC1333 , WTC2301 , WTC2302 , WTC2305 , WTC2305DS , WTC2306 , 2N60 , WTC4501 , WTC9435 , WTD40N03 , WTD9435 , WTD9575 , WTD9973 , WTG3043 , WTK4224 .

History: KP778V

Keywords - WTC2312 MOSFET datasheet

 WTC2312 cross reference
 WTC2312 equivalent finder
 WTC2312 lookup
 WTC2312 substitution
 WTC2312 replacement

 

 
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