CEF02N6A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEF02N6A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8.5 Ohm

Encapsulados: TO220F

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CEF02N6A datasheet

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 cep02n6a ceb02n6a cef02n6a.pdf pdf_icon

CEF02N6A

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5 1.4A 10V CEB02N6A 600V 8.5 1.4A 10V CEF02N6A 600V 8.5 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(

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 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEF02N6A

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S

 7.2. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEF02N6A

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

 7.3. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEF02N6A

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

MOSTRAR MÁS

Otros transistores... CEB04N7G, CEB05N65, CEB06N7, CEB07N65, CEB07N65A, CEB07N7, CEF02N65A, CEF02N65G, IRF3710, CEF02N6G, CEF02N7G, CEF02N9, CEF03N8, CEF04N6, CEF04N65, CEF04N7G, CEF05N65