All MOSFET. CEF02N6A Datasheet

 

CEF02N6A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEF02N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.9 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO220F

 CEF02N6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEF02N6A Datasheet (PDF)

 ..1. Size:354K  cet
 cep02n6a ceb02n6a cef02n6a.pdf

CEF02N6A CEF02N6A

CEP02N6A/CEB02N6ACEF02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6A 600V 8.5 1.4A 10VCEB02N6A 600V 8.5 1.4A 10VCEF02N6A 600V 8.5 1.4A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(

 7.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf

CEF02N6A CEF02N6A

CEP02N65D/CEB02N65D CEF02N65DPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65D 650V 6.9 2A 10VCEB02N65D 650V 6.9 2A 10VCEF02N65D 650V 6.9 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF S

 7.2. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf

CEF02N6A CEF02N6A

CEP02N65A/CEB02N65ACEF02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP02N65A 650V 10.5 1.3A 10VCEB02N65A 650V 10.5 1.3A 10VCEF02N65A 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES C

 7.3. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf

CEF02N6A CEF02N6A

CEP02N6G/CEB02N6GCEF02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6G 600V 5 2.2A 10VCEB02N6G 600V 5 2.2A 10VCEF02N6G 600V 5 2.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK

 7.4. Size:393K  cet
 cep02n65g ceb02n65g cef02n65g.pdf

CEF02N6A CEF02N6A

CEP02N65G/CEB02N65GCEF02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65G 650V 5.5 2A 10VCEB02N65G 650V 5.5 2A 10VCEF02N65G 650V 5.5 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3921-01L

 

 
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