FDC5612 Todos los transistores

 

FDC5612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDC5612
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SUPERSOT6
 

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FDC5612 Datasheet (PDF)

 ..1. Size:77K  fairchild semi
 fdc5612 f095.pdf pdf_icon

FDC5612

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

 ..2. Size:78K  fairchild semi
 fdc5612.pdf pdf_icon

FDC5612

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

 ..3. Size:177K  onsemi
 fdc5612.pdf pdf_icon

FDC5612

FDC561260V N-Channel PowerTrench MOSFETFeaturesGeneral Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 VThis N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventional Low gate charge (12.5nC typical).switching PWM controllers.These MOSFETs featur

 8.1. Size:140K  fairchild semi
 fdc5614p.pdf pdf_icon

FDC5612

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

MOSTRAR MÁS

Otros transistores... FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , FDB8030L , AS3401 , 4N60 , FDC6301N , FDC6302P , FDC6303N , FDC6304P , FDC6305N , FDC6306P , FDC6308P , FDC633N .

History: IRFM440

 

 
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