FDC5612 Datasheet. Specs and Replacement

Type Designator: FDC5612  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SUPERSOT6

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FDC5612 datasheet

 ..1. Size:77K  fairchild semi
fdc5612 f095.pdf pdf_icon

FDC5612

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒

 ..2. Size:78K  fairchild semi
fdc5612.pdf pdf_icon

FDC5612

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒

 ..3. Size:177K  onsemi
fdc5612.pdf pdf_icon

FDC5612

FDC5612 60V N-Channel PowerTrench MOSFET Features General Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional Low gate charge (12.5nC typical). switching PWM controllers. These MOSFETs featur... See More ⇒

 8.1. Size:140K  fairchild semi
fdc5614p.pdf pdf_icon

FDC5612

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic... See More ⇒

Detailed specifications: FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L, FDB7045L, FDB8030L, AS3401, 5N65, FDC6301N, FDC6302P, FDC6303N, FDC6304P, FDC6305N, FDC6306P, FDC6308P, FDC633N

Keywords - FDC5612 MOSFET specs

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