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FDC5612 Spec and Replacement


   Type Designator: FDC5612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SUPERSOT6

 FDC5612 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDC5612 Specs

 ..1. Size:77K  fairchild semi
 fdc5612 f095.pdf pdf_icon

FDC5612

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒

 ..2. Size:78K  fairchild semi
 fdc5612.pdf pdf_icon

FDC5612

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒

 ..3. Size:177K  onsemi
 fdc5612.pdf pdf_icon

FDC5612

FDC5612 60V N-Channel PowerTrench MOSFET Features General Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional Low gate charge (12.5nC typical). switching PWM controllers. These MOSFETs featur... See More ⇒

 8.1. Size:140K  fairchild semi
 fdc5614p.pdf pdf_icon

FDC5612

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic... See More ⇒

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Detailed specifications: FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , FDB8030L , AS3401 , 12N60 , FDC6301N , FDC6302P , FDC6303N , FDC6304P , FDC6305N , FDC6306P , FDC6308P , FDC633N .

Keywords - FDC5612 MOSFET specs

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