2N6845 Todos los transistores

PD - 90552C IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFET TRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9120 -100V 0.60 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proce

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/563G shall be completed by 9 February 2013. 9 November 2012 SUPERSEDING MIL-PRF-19500/563F 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U, JA

2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) VDSS -100V 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) ID(cont) -3.5A 1.02 (0.040) 11 17 RDS(on) 0.6 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) FEATURES 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry an

PD - 90553C IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET TRANSISTORS JANTXV2N6847 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/563 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9220 -200V 1.5 -2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

P-CHANNEL POWER MOSFET 2N6849HP MOSFET Transistor In A Hermetic Metal TO-205AD Package Single Pulse Avalanche Energy Rated Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage -100V VDG RGS = 20K Drain Gat

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS JAN 2N6849 2N6849U JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source