All MOSFET. 2N6845 Datasheet

 

2N6845 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6845

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.3 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO39

2N6845 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6845 Datasheet (PDF)

1.1. 2n6845u 2n6847u.pdf Size:256K _update-mosfet

2N6845
2N6845

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/563G shall be completed by 9 February 2013. 9 November 2012 SUPERSEDING MIL-PRF-19500/563F 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U, JA

1.2. 2n6845lcc4.pdf Size:19K _update-mosfet

2N6845
2N6845

2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) VDSS -100V ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) ID(cont) -3.5A 1.02 (0.040) 11 17 Ω RDS(on) 0.6Ω 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) FEATURES 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 •

 1.3. 2n6845 irff9120.pdf Size:130K _international_rectifier

2N6845
2N6845

PD - 90552C IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFETTRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9120 -100V 0.60Ω -4.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique proce

1.4. 2n6845u 2n6847u 2n6847u.pdf Size:256K _no

2N6845
2N6845

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/563G shall be completed by 9 February 2013. 9 November 2012 SUPERSEDING MIL-PRF-19500/563F 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U, JA

 1.5. 2n6845lcc4.pdf Size:19K _semelab

2N6845
2N6845

2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) VDSS -100V ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) ID(cont) -3.5A 1.02 (0.040) 11 17 Ω RDS(on) 0.6Ω 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) FEATURES 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 •

Datasheet: 2N6801LCC4 , 2N6801-SM , 2N6802 , 2N6802JANTX , 2N6802JANTXV , 2N6802SM , 2N6823 , 2N6826 , IRF460 , 2N6847 , 2N6849 , 2N6849L , 2N6851 , 2N6901 , 2N6901JANTX , 2N6901JANTXV , 2N6902 .

 

 
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