CEB75N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB75N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 72 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 70 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 240 pF
Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET CEB75N10
CEB75N10 Datasheet (PDF)
cep75n10 ceb75n10.pdf
CEP75N10/CEB75N10N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 72A, RDS(ON) = 15m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw
cep75n06 ceb75n06.pdf
CEP75N06/CEB75N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 87A, RDS(ON) = 12m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa
cep75n06g ceb75n06g.pdf
CEP75N06G/CEB75N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 75A, RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no
cep75a3 ceb75a3.pdf
CEP75A3/CEB75A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 69A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-263 & TO-220 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
