All MOSFET. CEB75N10 Datasheet

 

CEB75N10 Datasheet and Replacement


   Type Designator: CEB75N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO263
 

 CEB75N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEB75N10 Datasheet (PDF)

 ..1. Size:857K  cet
 cep75n10 ceb75n10.pdf pdf_icon

CEB75N10

CEP75N10/CEB75N10N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 72A, RDS(ON) = 15m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

 8.1. Size:324K  cet
 cep75n06 ceb75n06.pdf pdf_icon

CEB75N10

CEP75N06/CEB75N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 87A, RDS(ON) = 12m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

 8.2. Size:418K  cet
 cep75n06g ceb75n06g.pdf pdf_icon

CEB75N10

CEP75N06G/CEB75N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 75A, RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 9.1. Size:394K  cet
 cep75a3 ceb75a3.pdf pdf_icon

CEB75N10

CEP75A3/CEB75A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 69A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-263 & TO-220 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

SHOW MORE

Datasheet: CEB630N , CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G , 10N65 , CEB80N15 , CEB830G , CEB83A3 , CEB83A3G , CEB840A , CEB840G , CEB840L , CEB84A4 .

Keywords - CEB75N10 MOSFET datasheet

 CEB75N10 cross reference
 CEB75N10 equivalent finder
 CEB75N10 lookup
 CEB75N10 substitution
 CEB75N10 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.