CEB75N10 Specs and Replacement

Type Designator: CEB75N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO263

CEB75N10 substitution

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CEB75N10 datasheet

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 cep75n10 ceb75n10.pdf pdf_icon

CEB75N10

CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS(ON) = 15m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw... See More ⇒

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 cep75n06 ceb75n06.pdf pdf_icon

CEB75N10

CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒

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 cep75n06g ceb75n06g.pdf pdf_icon

CEB75N10

CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no... See More ⇒

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 cep75a3 ceb75a3.pdf pdf_icon

CEB75N10

CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-263 & TO-220 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒

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Detailed specifications: CEB630N, CEB730G, CEB73A3G, CEB740A, CEB740G, CEB75A3, CEB75N06, CEB75N06G, 10N65, CEB80N15, CEB830G, CEB83A3, CEB83A3G, CEB840A, CEB840G, CEB840L, CEB84A4

Keywords - CEB75N10 MOSFET specs

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