FDC658P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDC658P
   Código: .658
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SUPERSOT6

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FDC658P Datasheet (PDF)

..1. Size:106K fairchild semi
fdc658p.pdf

February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThis P-Channel Logic Level MOSFET is produced-4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.075 @ VGS = -4.5 V.PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainLo

8.1. Size:133K fairchild semi
fdc658ap.pdf

November 2011FDC658APSingle P-Channel Logic Level PowerTrench MOSFET-30V, -4A, 50m General Description FeaturesThis P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4AFairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4AApplications

8.2. Size:213K onsemi
fdc658ap.pdf

FDC658APSingle P-Channel Logic Level PowerTrench MOSFET-30V, -4A, 50m General Description FeaturesThis P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4AON Semiconductor advanced PowerTrench process. It has been optimized for battery power management Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4Aapplications. Low Gate ChargeAppli

8.3. Size:1873K kexin
fdc658ap.pdf

SMD Type MOSFETP-Channel MOSFETFDC658AP (KDC658AP)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)2 31 RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01 Low Gate Charge-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum

8.4. Size:836K cn vbsemi
fdc658ap.pdf

FDC658APwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch

Otros transistores... FDC637AN , FDC638P , FDC640P , FDC6506P , FDC653N , FDC654P , FDC655AN , FDC6561AN , P0903BDG , FDD5202P , FDD5680 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A .

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