FDC658P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDC658P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SUPERSOT6

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FDC658P datasheet

 ..1. Size:106K  fairchild semi
 fdc658p.pdf pdf_icon

FDC658P

February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced -4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.075 @ VGS = -4.5 V. PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Lo

 8.1. Size:133K  fairchild semi
 fdc658ap.pdf pdf_icon

FDC658P

November 2011 FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A Applications

 8.2. Size:213K  onsemi
 fdc658ap.pdf pdf_icon

FDC658P

FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A ON Semiconductor advanced PowerTrench process. It has been optimized for battery power management Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A applications. Low Gate Charge Appli

 8.3. Size:1873K  kexin
 fdc658ap.pdf pdf_icon

FDC658P

SMD Type MOSFET P-Channel MOSFET FDC658AP (KDC658AP) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 Low Gate Charge -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Maximum

MOSTRAR MÁS

Otros transistores... FDC637AN, FDC638P, FDC640P, FDC6506P, FDC653N, FDC654P, FDC655AN, FDC6561AN, 5N60, FDD5202P, FDD5680, FDD5690, FDD6030L, FDD6612A, FDD6670A, FDD6680, FDD6680A