FDC658P - описание и поиск аналогов

February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced -4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.075 @ VGS = -4.5 V. PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Lo

November 2011 FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A Applications

FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A ON Semiconductor advanced PowerTrench process. It has been optimized for battery power management Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A applications. Low Gate Charge Appli

SMD Type MOSFET P-Channel MOSFET FDC658AP (KDC658AP) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 Low Gate Charge -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Maximum

FDC658AP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Ch