FDC658P MOSFET Datasheet: P-Ch, 30V, 4A. Full specification with pinout and replacement list

FDC658P Specs and Replacement

Type Designator: FDC658P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 220 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SUPERSOT6

FDC658P substitution

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FDC658P datasheet

..1. Size:106K fairchild semi
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February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced -4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.075 @ VGS = -4.5 V. PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Lo... See More ⇒

8.1. Size:133K fairchild semi
fdc658ap.pdf pdf_icon

November 2011 FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A Applications ... See More ⇒

8.2. Size:213K onsemi
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FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A ON Semiconductor advanced PowerTrench process. It has been optimized for battery power management Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A applications. Low Gate Charge Appli... See More ⇒

8.3. Size:1873K kexin
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SMD Type MOSFET P-Channel MOSFET FDC658AP (KDC658AP) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 Low Gate Charge -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Maximum ... See More ⇒