CED40N10 Todos los transistores

 

CED40N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CED40N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TO251
 

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CED40N10 Datasheet (PDF)

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 ceu40n10 ced40n10.pdf pdf_icon

CED40N10

CED40N10/CEU40N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 37A, RDS(ON) = 32m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

 9.1. Size:397K  cet
 ceu4060al ced4060al.pdf pdf_icon

CED40N10

CED4060AL/CEU4060ALN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIM

 9.2. Size:398K  cet
 ced4060a ceu4060a.pdf pdf_icon

CED40N10

CED4060A/CEU4060AN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 15A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

 9.3. Size:398K  cet
 ceu4060a ced4060a.pdf pdf_icon

CED40N10

CED4060A/CEU4060AN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 15A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

MOSTRAR MÁS

Otros transistores... CED25N15L , CED3060 , CED3100 , CED3120 , CED3172 , CED3252 , CED4060A , CED4060AL , 4N60 , CED4204 , CED540L , CED540N , CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 .

History: MPSP65M650 | HRS140N06K | CS2N60I | FDH15N50 | HM2P10R | CS4N60A3TDY

 

 
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