CEB12N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB12N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 250 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 39 nC
Tiempo de subida (tr): 76 nS
Conductancia de drenaje-sustrato (Cd): 210 pF
Resistencia entre drenaje y fuente RDS(on): 0.73 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET CEB12N65
CEB12N65 Datasheet (PDF)
cep12n65 ceb12n65 cef12n65.pdf
CEP12N65/CEB12N65CEF12N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N65 650V 0.73 12A 10VCEB12N65 650V 0.73 12A 10VCEF12N65 650V 0.73 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C
cep12n6 ceb12n6 cef12n6.pdf
CEP12N6/CEB12N6 CEF12N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N6 600V 0.65 12A 10VCEB12N6 600V 0.65 12A 10VCEF12N6 600V 0.65 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep12n5 ceb12n5 cef12n5.pdf
CEP12N5/CEB12N5 CEF12N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP12N5 500V 0.54 12A 10VCEB12N5 500V 0.54 12A 10VCEF12N5 500V 0.54 12A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep12p10 ceb12p10.pdf
CEP12P10/CEB12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -11A, RDS(ON) =315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
