CEB12N65 Specs and Replacement

Type Designator: CEB12N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO263

CEB12N65 substitution

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CEB12N65 datasheet

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 cep12n65 ceb12n65 cef12n65.pdf pdf_icon

CEB12N65

CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73 12A 10V CEB12N65 650V 0.73 12A 10V CEF12N65 650V 0.73 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒

 7.1. Size:411K  cet
 cep12n6 ceb12n6 cef12n6.pdf pdf_icon

CEB12N65

CEP12N6/CEB12N6 CEF12N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N6 600V 0.65 12A 10V CEB12N6 600V 0.65 12A 10V CEF12N6 600V 0.65 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 8.1. Size:396K  cet
 cep12n5 ceb12n5 cef12n5.pdf pdf_icon

CEB12N65

CEP12N5/CEB12N5 CEF12N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N5 500V 0.54 12A 10V CEB12N5 500V 0.54 12A 10V CEF12N5 500V 0.54 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 9.1. Size:126K  cet
 cep12p10 ceb12p10.pdf pdf_icon

CEB12N65

CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

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Detailed specifications: CEM26138, CEM2939, CEM3032, CEM3060, CEM3109, CEM3120, CEA3252, CEB10N65, CS150N03A8, CEC8218, CEF05N6, CEF10N65, CEF12N65, CEH8205, CEM2539, CEM73A3G, CEZ3R03

Keywords - CEB12N65 MOSFET specs

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 CEB12N65 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.