CED20P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CED20P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de CED20P06 MOSFET
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CED20P06 datasheet
ced20p06 ceu20p06.pdf
CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE
ced20p10 ceu20p10.pdf
CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING
ced20n02 ceu20n02.pdf
CED20N02/CEU20N02 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 18A, RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI
Otros transistores... CEB30P03, CEB35P10, CEB50P03, CEB6601, CEB95P04, CED05P03, CED11P20, CED12P10, IRFP260, CED20P10, CED2303, CED30P10, CED3301, CED3423, CED4201, CED4301, CED4311
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