All MOSFET. CED20P06 Datasheet

 

CED20P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED20P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 4.5 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO251

CED20P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED20P06 Datasheet (PDF)

1.1. ced20p06 ceu20p06.pdf Size:428K _cet

CED20P06
CED20P06

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m? @VGS = -10V. RDS(ON) = 175m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

4.1. ced20p10 ceu20p10.pdf Size:417K _cet

CED20P06
CED20P06

CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc

 

Datasheet: CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , IRFP4227 , CED20P10 , CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 .

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