CEH2305 Todos los transistores

 

CEH2305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEH2305

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 2 W

Voltaje máximo drenador - fuente |Vds|: 30 V

Voltaje máximo fuente - puerta |Vgs|: 12 V

Corriente continua de drenaje |Id|: 4.9 A

Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de subida (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia entre drenaje y fuente RDS(on): 0.052 Ohm

Paquete / Cubierta: TSOP6

Búsqueda de reemplazo de MOSFET CEH2305

 

CEH2305 Datasheet (PDF)

 ..1. Size:302K  cet
ceh2305.pdf

CEH2305
CEH2305

CEH2305P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

 9.1. Size:447K  cet
ceh2321a.pdf

CEH2305
CEH2305

CEH2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise note

 9.2. Size:1163K  cet
ceh2310.pdf

CEH2305
CEH2305

CEH2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,)High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.45TSOP-6 package.6G(3)321S(4)TSOP-6ABSOLUTE

 9.3. Size:164K  cet
ceh2316.pdf

CEH2305
CEH2305

CEH2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

 9.4. Size:446K  cet
ceh2321.pdf

CEH2305
CEH2305

CEH2321P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter S

 9.5. Size:428K  cet
ceh2331.pdf

CEH2305
CEH2305

CEH2331P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -5.2A , RDS(ON) = 48m @VGS = -4.5V. RDS(ON) = 60m @VGS = -2.5V. RDS(ON) = 78m @VGS = -1.8V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

 9.6. Size:340K  cet
ceh2313.pdf

CEH2305
CEH2305

CEH2313P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol

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