Справочник MOSFET. CEH2305

 

CEH2305 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CEH2305

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 2 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Максимально допустимый постоянный ток стока (Id): 4.9 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 5 ns

Выходная емкость (Cd): 160 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.052 Ohm

Тип корпуса: TSOP6

Аналог (замена) для CEH2305

 

 

CEH2305 Datasheet (PDF)

1.1. ceh2305.pdf Size:302K _cet

CEH2305 CEH2305

CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52m? @VGS = -10V. RDS(ON) = 65m? @VGS = -4.5V. RDS(ON) = 119m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C u

5.1. ceh2321a.pdf Size:447K _cet

CEH2305 CEH2305

CEH2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55m? @VGS = -4.5V. RDS(ON) = 62m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Para

5.2. ceh2310.pdf Size:1163K _cet

CEH2305 CEH2305

CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33m? @VGS = 10V. RDS(ON) = 38m? @VGS = 4.5V. RDS(ON) = 50m? @VGS = 2.5V. RDS(ON) = 60m? @VGS = 1.8V. D(1,2,5,6,) High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. 4 5 TSOP-6 package. 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RA

 5.3. ceh2316.pdf Size:164K _cet

CEH2305 CEH2305

CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 50m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units

5.4. ceh2321.pdf Size:227K _cet

CEH2305 CEH2305

CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55m? @VGS = -4.5V. RDS(ON) = 80m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit

 5.5. ceh2331.pdf Size:428K _cet

CEH2305 CEH2305

CEH2331 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.2A , RDS(ON) = 48m? @VGS = -4.5V. RDS(ON) = 60m? @VGS = -2.5V. RDS(ON) = 78m? @VGS = -1.8V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C u

5.6. ceh2313.pdf Size:340K _cet

CEH2305 CEH2305

CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit U

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