CEH2305 Datasheet. Specs and Replacement

Type Designator: CEH2305  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TSOP6

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CEH2305 datasheet

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 ceh2305.pdf pdf_icon

CEH2305

CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA... See More ⇒

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 ceh2316.pdf pdf_icon

CEH2305

CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit... See More ⇒

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 ceh2313.pdf pdf_icon

CEH2305

CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol ... See More ⇒

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 ceh2310.pdf pdf_icon

CEH2305

CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,) High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. 4 5 TSOP-6 package. 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE... See More ⇒

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Detailed specifications: CED4301, CED4311, CED6601, CED6861, CED95P04, CEF14P20, CEF15P15, CEF6601, AO4407A, CEH2313, CEH2321, CEH2321A, CEH2331, CEH3456, CEM2163, CEM2187, CEM2281

Keywords - CEH2305 MOSFET specs

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