CEM2163 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEM2163
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.5 W
Tensión drenaje-fuente |Vds|: 20 V
Tensión compuerta-fuente |Vgs|: 12 V
Corriente continua de drenaje |Id|: 8.9 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 31.5 nC
Tiempo de elevación (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 505 pF
Resistencia drenaje-fuente RDS(on): 0.02 Ohm
Empaquetado / Estuche: SO8
Búsqueda de reemplazo de MOSFET CEM2163
CEM2163 Datasheet (PDF)
..1. cem2163.pdf 
Size:324K _cet
CEM2163P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth
..2. cem2163.pdf Size:856K _cn_vbsemi
CEM2163www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E
9.1. cem2192.pdf Size:389K _cet
CEM2192Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES20V, 8A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA
9.2. cem2133.pdf Size:356K _cet
CEM2133P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA =
9.3. cem2187.pdf Size:440K _cet
CEM2187P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unle
9.4. cem2182.pdf Size:407K _cet
CEM2182N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25
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