CEM2163 Todos los transistores

 

CEM2163 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM2163
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 505 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

CEM2163 Datasheet (PDF)

 ..1. Size:324K  cet
cem2163.pdf pdf_icon

CEM2163

CEM2163P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

 ..2. Size:856K  cn vbsemi
cem2163.pdf pdf_icon

CEM2163

CEM2163www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E

 9.1. Size:356K  cet
cem2133.pdf pdf_icon

CEM2163

CEM2133P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA =

 9.2. Size:407K  cet
cem2182.pdf pdf_icon

CEM2163

CEM2182N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


CEM2163
  CEM2163
  CEM2163
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: DH3N90 | DH3205A | DH300P06L | DH300P06I | DH300P06F | DH300P06E | DH300P06D | DH300P06B | DH300P06 | DH300N08I | DH300N08F | DH300N08E | DH300N08D | DH300N08B | DH300N08 | DH1K1N10I

 

 

 
Back to Top

 

Popular searches

2sc1166 | jcs9n50fc datasheet | 2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210

 


 
.