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CEM2163 PDF Specs and Replacement


   Type Designator: CEM2163
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 505 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8
 

 CEM2163 substitution

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CEM2163 PDF Specs

 ..1. Size:324K  cet
cem2163.pdf pdf_icon

CEM2163

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth... See More ⇒

 ..2. Size:856K  cn vbsemi
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CEM2163

CEM2163 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical E... See More ⇒

 9.1. Size:356K  cet
cem2133.pdf pdf_icon

CEM2163

CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA =... See More ⇒

 9.2. Size:407K  cet
cem2182.pdf pdf_icon

CEM2163

CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25... See More ⇒

Detailed specifications: CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , 4N60 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 .

Keywords - CEM2163 MOSFET specs

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