CEM2163 Datasheet and Replacement. Cross Reference Search

CEM2163 Datasheet (PDF)

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CEM2163P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

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CEM2163www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E

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cem2133.pdf pdf_icon

CEM2133P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA =

9.2. Size:407K cet
cem2182.pdf pdf_icon

CEM2182N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25