CEM3301 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CEM3301 PDF Specs

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CEM3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.0A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe... See More ⇒

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cem3307.pdf pdf_icon

CEM3307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles... See More ⇒

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CEM3307 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View... See More ⇒

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cem3317.pdf pdf_icon

CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surfa... See More ⇒

Otros transistores... CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , SI2302 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .