CEM3301 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM3301  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: SO8

  📄📄 Copiar 

 Búsqueda de reemplazo de CEM3301 MOSFET

- Selecciónⓘ de transistores por parámetros

 

CEM3301 datasheet

 ..1. Size:440K  cet
cem3301.pdf pdf_icon

CEM3301

CEM3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.0A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 8.1. Size:455K  cet
cem3307.pdf pdf_icon

CEM3301

CEM3307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 8.2. Size:866K  cn vbsemi
cem3307.pdf pdf_icon

CEM3301

CEM3307 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View

 9.1. Size:896K  cet
cem3317.pdf pdf_icon

CEM3301

CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surfa

Otros transistores... CEH3456, CEM2163, CEM2187, CEM2281, CEM2401, CEM2407, CEM3053, CEM3083, STF13NM60N, CEM3307, CEM3317, CEM3405L, CEM3407L, CEM4201, CEM4207, CEM4301, CEM4311