CEM3301 - параметры транзистора MOSFET, его аналоги, datasheet

CEM3301 Datasheet (PDF)

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CEM3301P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -7.0A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

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cem3307.pdf pdf_icon

CEM3307P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

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CEM3307www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

9.1. Size:896K cet
cem3317.pdf pdf_icon

CEM3317P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.-30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .