CEM4301 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM4301  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: SO8

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CEM4301 datasheet

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 cem4301.pdf pdf_icon

CEM4301

CEM4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

 8.1. Size:241K  cet
 cem4308.pdf pdf_icon

CEM4301

CEM4308 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 40V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.1. Size:387K  cet
 cem4311.pdf pdf_icon

CEM4301

CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 9.2. Size:833K  cn vbsemi
 cem4311.pdf pdf_icon

CEM4301

CEM4311 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G

MOSTRAR MÁS

Otros transistores... CEM3083, CEM3301, CEM3307, CEM3317, CEM3405L, CEM3407L, CEM4201, CEM4207, IRF530, CEM4311, CEM4435A, CEM4948, CEM4953, CEM4953A, CEM4953H, CEM6601, CEM6607