CEM4301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEM4301
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.5 W
Tensión drenaje-fuente |Vds|: 40 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia drenaje-fuente RDS(on): 0.042 Ohm
Empaquetado / Estuche: SO8
Búsqueda de reemplazo de MOSFET CEM4301
CEM4301 Datasheet (PDF)
0.1. cem4301.pdf 
Size:411K _cet
CEM4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -6A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw
8.1. cem4308.pdf Size:241K _cet
CEM4308Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C
9.1. cem4311.pdf Size:387K _cet
CEM4311P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
