All MOSFET. CEM4301 Datasheet

 

CEM4301 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM4301

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: SO8

CEM4301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4301 Datasheet (PDF)

0.1. cem4301.pdf Size:411K _cet

CEM4301
CEM4301

CEM4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -6A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

8.1. cem4308.pdf Size:241K _cet

CEM4301
CEM4301

CEM4308Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.1. cem4311.pdf Size:387K _cet

CEM4301
CEM4301

CEM4311P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

Datasheet: CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , J113 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 .

 

 
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