CEU12P10 Todos los transistores

 

CEU12P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEU12P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.315 Ohm
   Paquete / Cubierta: TO252
 

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CEU12P10 Datasheet (PDF)

 ..1. Size:252K  cet
 ced12p10 ceu12p10.pdf pdf_icon

CEU12P10

CED12P10/CEU12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -9A, RDS(ON) = 315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 9.1. Size:410K  cet
 ceu12n10 ced12n10.pdf pdf_icon

CEU12P10

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

 9.2. Size:411K  cet
 ced12n10 ceu12n10.pdf pdf_icon

CEU12P10

CED12N10/CEU12N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o

 9.3. Size:571K  cet
 ceu12n10l ced12n10l.pdf pdf_icon

CEU12P10

CED12N10L/CEU12N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MA

MOSTRAR MÁS

Otros transistores... CES2331 , CET4301 , CET4435A , CET6601 , CET6861 , CET9435A , CEU05P03 , CEU11P20 , IRF9540 , CEU20P06 , CEU20P10 , CEU2303 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 .

History: MTE1K8N25KM3

 

 
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