CEU12P10 PDF and Equivalents Search

 

CEU12P10 Specs and Replacement


   Type Designator: CEU12P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm
   Package: TO252
 

 CEU12P10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEU12P10 datasheet

 ..1. Size:252K  cet
ced12p10 ceu12p10.pdf pdf_icon

CEU12P10

CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒

 9.1. Size:410K  cet
ceu12n10 ced12n10.pdf pdf_icon

CEU12P10

CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

 9.2. Size:411K  cet
ced12n10 ceu12n10.pdf pdf_icon

CEU12P10

CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

 9.3. Size:571K  cet
ceu12n10l ced12n10l.pdf pdf_icon

CEU12P10

CED12N10L/CEU12N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MA... See More ⇒

Detailed specifications: CES2331 , CET4301 , CET4435A , CET6601 , CET6861 , CET9435A , CEU05P03 , CEU11P20 , 2N7000 , CEU20P06 , CEU20P10 , CEU2303 , CEU30P10 , CEU3301 , CEU3423 , CEU4201 , CEU4301 .

Keywords - CEU12P10 MOSFET specs

 CEU12P10 cross reference
 CEU12P10 equivalent finder
 CEU12P10 pdf lookup
 CEU12P10 substitution
 CEU12P10 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.