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CEU4201 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEU4201

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 38 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6 nS

Conductancia de drenaje-sustrato (Cd): 220 pF

Resistencia drenaje-fuente RDS(on): 0.026 Ohm

Empaquetado / Estuche: TO252

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CEU4201 Datasheet (PDF)

1.1. ced4201 ceu4201.pdf Size:416K _cet

CEU4201
CEU4201

CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26m? @VGS = -10V. RDS(ON) = 36m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RA

4.1. ceu4204 ced4204.pdf Size:405K _cet

CEU4201
CEU4201

CED4204/CEU4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 42m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING

 5.1. ceu4279 ced4279.pdf Size:680K _cet

CEU4201
CEU4201

CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. -40V , -9A , RDS(ON) = 72m? @VGS = 10V. RDS(ON) = 110m? @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1 G

5.2. ceu4269.pdf Size:584K _cet

CEU4201
CEU4201

CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. -40V , -12A , RDS(ON) = 45m? @VGS = 10V. RDS(ON) = 65m? @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1 G1 TO-25

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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