CEU4201 MOSFET Datasheet: P-Ch, 40V, 28A. Full specification with pinout and replacement list

CEU4201 Specs and Replacement

Type Designator: CEU4201

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TO252

CEU4201 substitution

- MOSFET ⓘ Cross-Reference Search

CEU4201 datasheet

..1. Size:381K cet
ced4201 ceu4201.pdf pdf_icon

CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26m @VGS = -10V. RDS(ON) = 36m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX... See More ⇒

8.1. Size:405K cet
ceu4204 ced4204.pdf pdf_icon

CED4204/CEU4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM... See More ⇒

9.1. Size:680K cet
ceu4279 ced4279.pdf pdf_icon

CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V , -9A , RDS(ON) = 72m @VGS = 10V. RDS(ON) = 110m @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acqui... See More ⇒

9.2. Size:584K cet
ceu4269.pdf pdf_icon

CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V , -12A , RDS(ON) = 45m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1... See More ⇒

Detailed specifications: CEU11P20, CEU12P10, CEU20P06, CEU20P10, CEU2303, CEU30P10, CEU3301, CEU3423, AON7408, CEU4301, CEU4311, CEU6601, CEU6861, CEU95P04, 2N7000A, 2N7000K, 2N7002KA