CEU4201 - аналоги, параметры транзистора - Справочник транзисторов

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CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26m @VGS = -10V. RDS(ON) = 36m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX

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CED4204/CEU4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM

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CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V , -9A , RDS(ON) = 72m @VGS = 10V. RDS(ON) = 110m @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acqui

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CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V , -12A , RDS(ON) = 45m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1

Другие MOSFET... CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 , CEU2303 , CEU30P10 , CEU3301 , CEU3423 , AON7408 , CEU4301 , CEU4311 , CEU6601 , CEU6861 , CEU95P04 , 2N7000A , 2N7000K , 2N7002KA .