KMB4D0N30SA Todos los transistores

 ..1. Size:57K  kec
 kmb4d0n30sa.pdf

SEMICONDUCTOR KMB4D0N30SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for portable equipment. L B L DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX FEATURES 2 3 D 0.40+0.15/-0.05

 9.1. Size:389K  kec
 kmb4d5np55q.pdf

SEMICONDUCTOR KMB4D5NP55Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES N-Channel A VDSS=55V, ID=4.5A. DIM MILLIMETERS RDS(ON)=60m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=95m (Max.) @

 9.2. Size:369K  kec
 kmb4d8dn55q.pdf

SEMICONDUCTOR KMB4D8DN55Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=55V, ID=4.8A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=50m (Max.) @ VGS=10V _ 3

 9.3. Size:51K  kec
 kmb4d5dn60qa.pdf

SEMICONDUCTOR KMB4D5DN60QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. H T D P G L FEATURES A VDSS=60V, ID=4.5A. DIM MILLIMETERS A _ + Drain-Source ON