All MOSFET. KMB4D0N30SA Datasheet

 

KMB4D0N30SA MOSFET. Datasheet pdf. Equivalent


   Type Designator: KMB4D0N30SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT23

 KMB4D0N30SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB4D0N30SA Datasheet (PDF)

 ..1. Size:57K  kec
 kmb4d0n30sa.pdf

KMB4D0N30SA KMB4D0N30SA

SEMICONDUCTOR KMB4D0N30SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for portable equipment.L B LDIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAXFEATURES 23 D 0.40+0.15/-0.05

 9.1. Size:389K  kec
 kmb4d5np55q.pdf

KMB4D0N30SA KMB4D0N30SA

SEMICONDUCTOR KMB4D5NP55QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES N-ChannelA: VDSS=55V, ID=4.5A.DIM MILLIMETERS: RDS(ON)=60m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=95m (Max.) @

 9.2. Size:369K  kec
 kmb4d8dn55q.pdf

KMB4D0N30SA KMB4D0N30SA

SEMICONDUCTOR KMB4D8DN55QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=55V, ID=4.8A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=50m (Max.) @ VGS=10V_3

 9.3. Size:51K  kec
 kmb4d5dn60qa.pdf

KMB4D0N30SA KMB4D0N30SA

SEMICONDUCTOR KMB4D5DN60QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for load switch and Back light inverter. HTD PG LFEATURES AVDSS=60V, ID=4.5A.DIM MILLIMETERSA _+Drain-Source ON

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVF2N65D

 

 
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