KMB4D0N30SA - параметры транзистора MOSFET, его аналоги, datasheet

KMB4D0N30SA Datasheet (PDF)

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SEMICONDUCTOR KMB4D0N30SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheEcharacteristics. It is mainly suitable for portable equipment.L B LDIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAXFEATURES 23 D 0.40+0.15/-0.05

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SEMICONDUCTOR KMB4D5NP55QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES N-ChannelA: VDSS=55V, ID=4.5A.DIM MILLIMETERS: RDS(ON)=60m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=95m (Max.) @

9.2. Size:369K kec
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SEMICONDUCTOR KMB4D8DN55QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=55V, ID=4.8A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=50m (Max.) @ VGS=10V_3

9.3. Size:51K kec
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SEMICONDUCTOR KMB4D5DN60QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for load switch and Back light inverter. HTD PG LFEATURES AVDSS=60V, ID=4.5A.DIM MILLIMETERSA _+Drain-Source ON

Другие MOSFET... KMB060N60FA , KMB060N60PA , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA , KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , SPW47N60C3 , KMB4D5DN60QA , KMB4D5NP55Q , KMB4D8DN55Q , KMB5D0NP40Q , KMB5D5NP30Q , KMB6D0DN30QA , KMB6D0DN35QA , KMB6D0NP40QA .