KML0D6NP20EA Todos los transistores

 

KML0D6NP20EA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KML0D6NP20EA

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 0.515(0.39) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.41(0.8) Ohm

Encapsulados: TES6

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KML0D6NP20EA datasheet

 ..1. Size:59K  kec
 kml0d6np20ea.pdf pdf_icon

KML0D6NP20EA

SEMICONDUCTOR KML0D6NP20EA TECHNICAL DATA N and P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered B Systems and Level-Shifter. B1 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 FEATURES _ A1 1.0 + 0.05 2 5 _ N-Channel B 1.6 + 0.05 _ B1 1.2 + 0.05 VDSS=20V, ID=600mA (RDS(ON)=0.70 @ VGS=4.5V). C 0.50 3 4 _ D 0.2 + 0.05

 9.1. Size:760K  kec
 kml0d3p20v.pdf pdf_icon

KML0D6NP20EA

SEMICONDUCTOR KML0D3P20V TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS=-4.5V RDS(ON)=1.6 @ VGS=-2.5V RDS(ON)=2.7 @ VGS=-1.8V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Mar

 9.2. Size:783K  kec
 kml0d4p20e.pdf pdf_icon

KML0D6NP20EA

SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS= -4.5V RDS(ON)=1.6 @ VGS= -2.5V RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. MAXIMUM RATING (Ta=25 ) CHA

 9.3. Size:771K  kec
 kml0d4n20e.pdf pdf_icon

KML0D6NP20EA

SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance RDS(ON)=0.70 @ VGS=4.5V RDS(ON)=0.85 @ VGS=2.5V RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHAR

MOSTRAR MÁS

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History: KO3403

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