Справочник MOSFET. KML0D6NP20EA

 

KML0D6NP20EA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KML0D6NP20EA
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.515(0.39) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.41(0.8) Ohm
   Тип корпуса: TES6

 Аналог (замена) для KML0D6NP20EA

 

 

KML0D6NP20EA Datasheet (PDF)

 ..1. Size:59K  kec
 kml0d6np20ea.pdf

KML0D6NP20EA KML0D6NP20EA

SEMICONDUCTOR KML0D6NP20EATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionIts Mainly Suitable for Load Switching Cell Phones, Battery PoweredBSystems and Level-Shifter.B11 6 DIM MILLIMETERS_A 1.6 + 0.05FEATURES _A1 1.0 + 0.052 5_N-ChannelB 1.6 + 0.05_B1 1.2 + 0.05: VDSS=20V, ID=600mA (RDS(ON)=0.70 @ VGS=4.5V).C 0.503 4_D 0.2 + 0.05

 9.1. Size:760K  kec
 kml0d3p20v.pdf

KML0D6NP20EA KML0D6NP20EA

SEMICONDUCTOR KML0D3P20VTECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Cell Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=-20V, ID=-0.3ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS=-4.5V: RDS(ON)=1.6 @ VGS=-2.5V: RDS(ON)=2.7 @ VGS=-1.8VMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL P-Ch UNITMar

 9.2. Size:783K  kec
 kml0d4p20e.pdf

KML0D6NP20EA KML0D6NP20EA

SEMICONDUCTOR KML0D4P20ETECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS= -20V, ID= -0.35ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V: RDS(ON)=1.6 @ VGS= -2.5V: RDS(ON)=2.7 @ VGS= -1.8VESD Protection diode.MAXIMUM RATING (Ta=25)CHA

 9.3. Size:771K  kec
 kml0d4n20e.pdf

KML0D6NP20EA KML0D6NP20EA

SEMICONDUCTOR KML0D4N20ETECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=20V, ID=0.4ADrain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V: RDS(ON)=0.85 @ VGS=2.5V: RDS(ON)=1.25 @ VGS=1.8VSuper High Dense Cell DesignMAXIMUM RATING (Ta=25)CHAR

 9.4. Size:377K  kec
 kml0d4n20v.pdf

KML0D6NP20EA KML0D6NP20EA

SEMICONDUCTOR KML0D4N20VTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIts mainly suitable for Load Switching Cell Phones, Battery PoweredSystems and Level-Shifter.EBDIM MILLIMETERS2FEATURES _A 1.2 +0.05_B 0.8 +0.05VDSS=20V, ID=0.4A13_C 0.5 + 0.05Drain-Soure ON Resistance _D 0.3 + 0.05_E 1.2 + 0.05: RDS(ON)=0.70 @ VGS=4.5V_G 0.8 +

 9.5. Size:743K  kec
 kml0d4n20tv.pdf

KML0D6NP20EA KML0D6NP20EA

SEMICONDUCTOR KML0D4N20TVTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Cell Phones, Battery PoweredESystems and Level-Shifter.B2DIM MILLIMETERSFEATURES _1 A 1.2 +0.053_B 0.8 +0.05VDSS=20V, ID=0.4AC 0.34 MaxDrain-Soure ON Resistance _D 0.3 + 0.05_E 1.2 + 0.05: RDS(ON)=0.70 @ VGS=4.5V_F 0.8 + 0.05

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