KML0D6NP20EA Datasheet and Replacement. Cross Reference Search

KML0D6NP20EA Datasheet (PDF)

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SEMICONDUCTOR KML0D6NP20EATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionIts Mainly Suitable for Load Switching Cell Phones, Battery PoweredBSystems and Level-Shifter.B11 6 DIM MILLIMETERS_A 1.6 + 0.05FEATURES _A1 1.0 + 0.052 5_N-ChannelB 1.6 + 0.05_B1 1.2 + 0.05: VDSS=20V, ID=600mA (RDS(ON)=0.70 @ VGS=4.5V).C 0.503 4_D 0.2 + 0.05

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SEMICONDUCTOR KML0D3P20VTECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Cell Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=-20V, ID=-0.3ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS=-4.5V: RDS(ON)=1.6 @ VGS=-2.5V: RDS(ON)=2.7 @ VGS=-1.8VMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL P-Ch UNITMar

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SEMICONDUCTOR KML0D4P20ETECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS= -20V, ID= -0.35ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V: RDS(ON)=1.6 @ VGS= -2.5V: RDS(ON)=2.7 @ VGS= -1.8VESD Protection diode.MAXIMUM RATING (Ta=25)CHA

9.3. Size:771K kec
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SEMICONDUCTOR KML0D4N20ETECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=20V, ID=0.4ADrain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V: RDS(ON)=0.85 @ VGS=2.5V: RDS(ON)=1.25 @ VGS=1.8VSuper High Dense Cell DesignMAXIMUM RATING (Ta=25)CHAR