KML0D6NP20EA MOSFET Datasheet: NP-Ch, 20V, 0.515(0.39)A. Full specification with pinout and replacement list

KML0D6NP20EA Specs and Replacement

Type Designator: KML0D6NP20EA

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.515(0.39) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.41(0.8) Ohm

Package: TES6

KML0D6NP20EA substitution

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KML0D6NP20EA datasheet

..1. Size:59K kec
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SEMICONDUCTOR KML0D6NP20EA TECHNICAL DATA N and P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered B Systems and Level-Shifter. B1 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 FEATURES _ A1 1.0 + 0.05 2 5 _ N-Channel B 1.6 + 0.05 _ B1 1.2 + 0.05 VDSS=20V, ID=600mA (RDS(ON)=0.70 @ VGS=4.5V). C 0.50 3 4 _ D 0.2 + 0.05... See More ⇒

9.1. Size:760K kec
kml0d3p20v.pdf pdf_icon

SEMICONDUCTOR KML0D3P20V TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS=-4.5V RDS(ON)=1.6 @ VGS=-2.5V RDS(ON)=2.7 @ VGS=-1.8V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Mar... See More ⇒

9.2. Size:783K kec
kml0d4p20e.pdf pdf_icon

SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS= -4.5V RDS(ON)=1.6 @ VGS= -2.5V RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. MAXIMUM RATING (Ta=25 ) CHA... See More ⇒

9.3. Size:771K kec
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SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance RDS(ON)=0.70 @ VGS=4.5V RDS(ON)=0.85 @ VGS=2.5V RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHAR... See More ⇒