KMB6D0NS30QA Todos los transistores

 ..1. Size:407K  kec
 kmb6d0ns30qa.pdf

SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. The MOSFET and Schottky diode are isolated inside the T package. It is mainly suitable for portable equipment and SMPS. D P G L U A FEATURES DIM MILLI

 7.1. Size:861K  kec
 kmb6d0np40qa.pdf

SEMICONDUCTOR KMB6D0NP40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for Back-light Inverter. T D P G L FEATURES N-Channel A VDSS=40V, ID=6A. DIM MILLIMETERS RDS(ON)=31m (Max.) @ VGS=

 8.1. Size:374K  kec
 kmb6d0dn30qb.pdf

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D

 8.2. Size:56K  kec
 kmb6d0dn30qa.pdf

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ +

 8.3. Size:826K  kec
 kmb6d0dn35qb.pdf

SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for DC/DC Converters. T D P G L U FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A

 8.4. Size:60K  kec
 kmb6d0dn35qa.pdf

SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2