Справочник MOSFET. KMB6D0NS30QA

 

KMB6D0NS30QA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KMB6D0NS30QA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: FLP8

 Аналог (замена) для KMB6D0NS30QA

 

 

KMB6D0NS30QA Datasheet (PDF)

 ..1. Size:407K  kec
 kmb6d0ns30qa.pdf

KMB6D0NS30QA KMB6D0NS30QA

SEMICONDUCTOR KMB6D0NS30QATECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTIONThis trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. The MOSFET and Schottky diode are isolated inside theTpackage. It is mainly suitable for portable equipment and SMPS. D P GLUAFEATURES DIM MILLI

 7.1. Size:861K  kec
 kmb6d0np40qa.pdf

KMB6D0NS30QA KMB6D0NS30QA

SEMICONDUCTOR KMB6D0NP40QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for Back-light Inverter.TD P GLFEATURES N-ChannelA: VDSS=40V, ID=6A.DIM MILLIMETERS: RDS(ON)=31m (Max.) @ VGS=

 8.1. Size:374K  kec
 kmb6d0dn30qb.pdf

KMB6D0NS30QA KMB6D0NS30QA

SEMICONDUCTOR KMB6D0DN30QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for portable equipment and DC-DCTConverter Applications. D P GLUFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSD

 8.2. Size:56K  kec
 kmb6d0dn30qa.pdf

KMB6D0NS30QA KMB6D0NS30QA

SEMICONDUCTOR KMB6D0DN30QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and DC-DC HTConverter Applications.D PG LFEATURES AVDSS=30V, ID=6A.DIM MILLIMETERSA _+

 8.3. Size:826K  kec
 kmb6d0dn35qb.pdf

KMB6D0NS30QA KMB6D0NS30QA

SEMICONDUCTOR KMB6D0DN35QBTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for DC/DC Converters.TD P GLUFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSDrain-Source ON Resistance._+A

 8.4. Size:60K  kec
 kmb6d0dn35qa.pdf

KMB6D0NS30QA KMB6D0NS30QA

SEMICONDUCTOR KMB6D0DN35QATECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converters. HTD PG LFEATURES AVDSS=35V, ID=6A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NP100P04PDG

 

 
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