KMB6D0NS30QA MOSFET Datasheet: N-Ch, 30V, 6A. Full specification with pinout and replacement list

KMB6D0NS30QA Specs and Replacement

Type Designator: KMB6D0NS30QA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: FLP8

KMB6D0NS30QA substitution

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KMB6D0NS30QA datasheet

..1. Size:407K kec
kmb6d0ns30qa.pdf pdf_icon

SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. The MOSFET and Schottky diode are isolated inside the T package. It is mainly suitable for portable equipment and SMPS. D P G L U A FEATURES DIM MILLI... See More ⇒

7.1. Size:861K kec
kmb6d0np40qa.pdf pdf_icon

SEMICONDUCTOR KMB6D0NP40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for Back-light Inverter. T D P G L FEATURES N-Channel A VDSS=40V, ID=6A. DIM MILLIMETERS RDS(ON)=31m (Max.) @ VGS=... See More ⇒

8.1. Size:374K kec
kmb6d0dn30qb.pdf pdf_icon

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D... See More ⇒

8.2. Size:56K kec
kmb6d0dn30qa.pdf pdf_icon

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ + ... See More ⇒