KF5N50PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF5N50PZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 71 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de KF5N50PZ MOSFET
KF5N50PZ Datasheet (PDF)
kf5n50pz.pdf

KF5N50PZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode power supplies. A 9.9 0.2B
kf5n50ps-fs.pdf

KF5N50PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic ballast and swi
kf5n50fr kf5n50pr kf5n50ps.pdf

KF5N50PR/FR/PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PR, KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic
kf5n50f.pdf

KF5N50P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50P, KF5N50PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow
Otros transistores... KF5N50DS , KF5N50DZ , KF5N50F , KF5N50FS , KF5N50FSA , KF5N50FZ , KF5N50FZA , KF5N50IZ , RU7088R , KF5N53D , KF5N53DS , KF5N53F , KF5N53FS , KF5N60D , KF5N60F , KF5N60FZ , KF5N60I .
History: IPI60R520CP | WMM180N03TS
History: IPI60R520CP | WMM180N03TS



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