Справочник MOSFET. KF5N50PZ

 

KF5N50PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KF5N50PZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 71 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.15 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для KF5N50PZ

 

 

KF5N50PZ Datasheet (PDF)

 ..1. Size:401K  kec
 kf5n50pz.pdf

KF5N50PZ KF5N50PZ

KF5N50PZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode power supplies. A 9.9 0.2B

 7.1. Size:90K  kec
 kf5n50ps-fs.pdf

KF5N50PZ KF5N50PZ

KF5N50PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic ballast and swi

 7.2. Size:79K  kec
 kf5n50fr kf5n50pr kf5n50ps.pdf

KF5N50PZ KF5N50PZ

KF5N50PR/FR/PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PR, KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic

 8.1. Size:395K  kec
 kf5n50f.pdf

KF5N50PZ KF5N50PZ

KF5N50P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50P, KF5N50PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow

 8.2. Size:380K  kec
 kf5n50d dz.pdf

KF5N50PZ KF5N50PZ

KF5N50D/DZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and LC D_A 6.60 + 0.20_B 6.10 + 0.20switching mode p

 8.3. Size:382K  kec
 kf5n50ds.pdf

KF5N50PZ KF5N50PZ

KF5N50DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic ba

 8.4. Size:382K  kec
 kf5n50dz-ds.pdf

KF5N50PZ KF5N50PZ

KF5N50DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic

 8.5. Size:404K  kec
 kf5n50dz-iz.pdf

KF5N50PZ KF5N50PZ

KF5N50DZ/IZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50DZThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20

 8.6. Size:716K  kec
 kf5n50fza-fsa.pdf

KF5N50PZ KF5N50PZ

KF5N50FZA/FSASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS=

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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