KF5N50PZ PDF and Equivalents Search

 ..1. Size:401K  kec
 kf5n50pz.pdf

KF5N50PZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B ... See More ⇒

 7.1. Size:90K  kec
 kf5n50ps-fs.pdf

KF5N50PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic ballast and swi... See More ⇒

 7.2. Size:79K  kec
 kf5n50fr kf5n50pr kf5n50ps.pdf

KF5N50PR/FR/PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PR, KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic... See More ⇒

 8.1. Size:395K  kec
 kf5n50f.pdf

KF5N50P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode pow... See More ⇒

 8.2. Size:380K  kec
 kf5n50d dz.pdf

KF5N50D/DZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode p... See More ⇒

 8.3. Size:382K  kec
 kf5n50ds.pdf

KF5N50DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ba... See More ⇒

 8.4. Size:382K  kec
 kf5n50dz-ds.pdf

KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic... See More ⇒

 8.5. Size:404K  kec
 kf5n50dz-iz.pdf

KF5N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ... See More ⇒

 8.6. Size:716K  kec
 kf5n50fza-fsa.pdf

KF5N50FZA/FSA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS=... See More ⇒